SI4464DY Vishay, SI4464DY Datasheet

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SI4464DY

Manufacturer Part Number
SI4464DY
Description
N-Channel 200-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
200
(V)
J
a
0.260 @ V
0.240 @ V
= 150_C)
G
S
S
S
a
Parameter
Parameter
r
DS(on)
_
1
2
3
4
a
GS
GS
N-Channel 200-V (D-S) MOSFET
(W)
= 6.0 V
= 10 V
Top View
SO-8
a
8
7
6
5
A
= 25_C UNLESS OTHERWISE NOTED)
D
D
D
D
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
2.2
2.1
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
D
AS
S
D
stg
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for (Lowest Q
APPLICATIONS
D Primary Side Switch
G
N-Channel MOSFET
10 secs
Typical
2.2
1.7
2.1
2.5
1.6
37
68
17
D
S
-55 to 150
"20
0.45
200
8
3
Steady State
Maximum
Vishay Siliconix
1.7
1.3
1.2
1.5
0.9
50
85
21
Si4464DY
g
and Low R
www.vishay.com
Unit
_C/W
Unit
C/W
mJ
_C
W
V
A
A
G
)
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI4464DY Summary of contents

Page 1

... 25_C 70_C Symbol sec R thJA Steady State Steady State R thJF Si4464DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Q APPLICATIONS D Primary Side Switch N-Channel MOSFET 10 secs Steady State 200 "20 2.2 1.7 1.7 1 0.45 2.1 1.2 2 ...

Page 2

... Si4464DY Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 72051 S-22099—Rev. A, 02-Dec-02 New Product 25_C J 0.6 0.8 1.0 Si4464DY Vishay Siliconix Capacitance 800 C iss 600 400 200 C rss C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si4464DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.4 0.0 -0.4 -0.8 -1.2 -50 - Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product = 250 100 125 150 r Limited DS(on) Safe Operating Area 10 I D(on) Limited 1 0 25_C A Single Pulse 0.01 BV Limited DSS 0 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72051 S-22099—Rev. A, 02-Dec-02 New Product Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec) Si4464DY Vishay Siliconix - www.vishay.com 10 5 Datasheet pdf - http://www.DataSheet4U.net/ ...

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