SI4464DY Vishay, SI4464DY Datasheet - Page 2

• Manufacturer Part Number: SI4464DY
• Description: N-Channel 200-V (D-S) MOSFET
• Manufacturer: Vishay

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Si4464DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
8
6
4
2
0
0
Parameter
a
a
V
a
DS
2
Output Characteristics
- Drain-to-Source Voltage (V)
V
GS
a
J
= 10 thru 5 V
= 25_C UNLESS OTHERWISE NOTED)
4
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
R
g
Q
t
SD
t
t
rr
fs
gs
gd
G
r
f
g
6
4 V
3 V
New Product
8
V
V
I
D
DS
DS
^ 1.0 A, V
= 100 V, V
I
= 160 V, V
V
V
F
V
V
V
V
V
V
V
DD
DD
DS
= 2.1 A, di/dt = 100 A/ms
I
DS
DS
DS
GS
Test Condition
GS
DS
S
= 2.1 A, V
= 100 V, R
= 100 V, R
= 0 V, V
= V
= 160 V, V
w 5 V, V
= 6.0 V, I
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
GS
= 10 V, R
= 10 V, I
D
= 0 V, T
GS
D
GS
D
= 250 mA
D
L
L
GS
= "20 V
= 2.2 A
= 2.2 A
= 100 W
= 100 W
= 2.1 A
= 10 V
= 0 V
= 0 V
J
D
8
6
4
2
0
G
= 55_C
= 2.2 A
0
= 6 W
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
2.0
8
T
C
25_C
= 125_C
3
0.195
0.210
Typ
8.0
0.8
2.5
3.8
2.5
12
10
12
15
15
60
S-22099—Rev. A, 02-Dec-02
Document Number: 72051
4
Max
"100
0.240
0.260
1.2
18
15
20
25
25
90
4
1
5
-55 _C
5
Unit
nC
nA
m
mA
ns
W
W
W
V
A
S
V
6
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