SI4866BDY Vishay Siliconix, SI4866BDY Datasheet
SI4866BDY
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SI4866BDY Summary of contents
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... GS SO Top View Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...
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... Si4866BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...
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... S09-0540-Rev. B, 06-Apr-09 1 1.0 1.5 2.0 2 Drain Current ( Gate Charge Si4866BDY Vishay Siliconix 2.0 1.6 25 °C 1 125 °C 0 °C 0.0 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 7000 5600 C iss 4200 2800 C oss 1400 C ...
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... Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 150 °C 1 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.1 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C 0.6 0.8 1.0 1 250 µ 100 125 150 100 Limited by R ...
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... T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4866BDY Vishay Siliconix 100 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...
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... Si4866BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... B 0.35 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.50 0.93 q 0° 8° S 0.44 0.64 Package Information Vishay Siliconix All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° ...
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... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...