SI4866BDY Vishay Siliconix, SI4866BDY Datasheet - Page 4

• Manufacturer Part Number: SI4866BDY
• Description: N-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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4
0.001
- 0.1
- 0.3
- 0.5
0.01
100
0.3
0.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
25 °C
I
75
D
0.8
= 250 µA
0.01
100
0.1
10
100
0.01
1
Limited by R
I
* V
D
Safe Operating Area, Junction-to-Ambient
1.0
= 5 mA
GS
125
V
minimum V
Single Pulse
0.1
DS
150
T
1.2
DS(on)
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
DS(on)
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
DC
I
Single Pulse Power, Junction-to-Ambient
D
= 12 A
1
100
V
0.01
GS
- Gate-to-Source Voltage (V)
2
Time (s)
0.1
S09-0540-Rev. B, 06-Apr-09
Document Number: 70341
3
125 °C
25 °C
1
4
10
5
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