SI4914BDY Vishay Siliconix, SI4914BDY Datasheet - Page 5

• Manufacturer Part Number: SI4914BDY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
0.001
- 0.4
- 0.7
- 1.0
0.01
- 0.1
100
0.1
0.5
0.2
10
1
- 50
0
I
D
= 5 mA
- 25
Source-Drain Diode Forward Voltage
I
0.2
D
= 250 µA
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
T
J
= 150 °C
0.6
50
75
0.8
Limited by R
0.01
100
T
100
0.1
10
J
1
0.1
= 25 °C
1.0
125
Single Pulse
* V
T
A
GS
= 25 °C
DS(on)
> minimum V
1.2
150
V
DS
*
Safe Operating Area
- Drain-to-Source Voltage (V)
1
GS
at which R
0.10
0.08
0.06
0.04
0.02
10
DS(on)
100
80
60
40
20
0
0
0
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
1 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
Si4914BDY
6
T
www.vishay.com
T
1
A
A
= 125 °C
8
= 25 °C
10
1
0
5
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