SI4914BDY Vishay Siliconix, SI4914BDY Datasheet - Page 8

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SI4914BDY

Manufacturer Part Number
SI4914BDY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.040
0.034
0.028
0.022
0.016
0.010
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
I
D
= 8 A
On-Resistance vs. Drain Current
0.5
3.4
10
V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
V
I
D
GS
= 15 V
- Drain Current (A)
Gate Charge
1.0
6.8
20
= 4.5 V
V
GS
V
DS
= 10 V thru 5 V
V
GS
= 10 V
10.2
1.5
30
= 10 V
V
DS
4 V
3 V
= 20 V
13.6
2.0
40
17.0
2.5
50
1200
960
720
480
240
2.0
1.6
1.2
0.8
0.4
1.7
1.5
1.3
1.1
0.9
0.7
0
0
- 50
0
0
C
I
rss
T
D
On-Resistance vs. Junction Temperature
J
= 7.5 A
- 25
= 125 °C
T
1.2
J
6
V
V
= 25 °C
Transfer Characteristics
GS
DS
C
T
0
J
C
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
Capacitance
25
2.4
12
S09-2109-Rev. E, 12-Oct-09
50
Document Number: 69654
3.6
18
75
V
T
GS
J
V
= - 55 °C
= 10 V
GS
100
4.8
= 4.5 V
24
125
6.0
150
30
Datasheet pdf - http://www.DataSheet4U.net/

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