SI4925 Fairchild Semiconductor, SI4925 Datasheet
SI4925
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SI4925 Summary of contents
Page 1
... unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2001 = 0.032 @ V = -10 V, DS(ON 0.045 @ V = -4.5 V. DS(ON SOIC-16 SOT-223 Si4925DY -30 ±20 -6 -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W Si4925DY Rev.A ...
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... J 0.034 0.045 -20 16 1540 400 170 14 -1.3 -0.73 -1.2 is guaranteed 135 C 0.003 in 2 pad of 2oz copper. Si4925DY Rev.A Units V o mV/ C µA µ mV ...
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... Dain Current and Gate Voltage - 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125° 25° C -55° C 0.3 0.6 0.9 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4925DY Rev 1.5 ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 20 30 300 300 Si4925DY Rev.A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...