SI4925 Fairchild Semiconductor, SI4925 Datasheet - Page 2

• Manufacturer Part Number: SI4925
• Description: Dual P-Channel/ Logic Level/ PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
Notes:
1. R
FS
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BV
GS(th)
V
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
GS(th)
design while R
Scale 1 : 1 on letter size paper
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
is determined by the user's board design.
(Note 2)
(T
a. 78
A
pad of 2oz copper.
(Note 2)
= 25
O
C/W on a 0.5 in
O
C unless otherwise noted )
2
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GEN
DS
GS
GS
= -250 µA, Referenced to 25
= 250 µA, Referenced to 25
= -15 V, I
= -5 V
= 0 V, I
= -24 V, V
= 16 V, V
= -16 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -10 V, I
= -15 V, V
= -10 V, I
= 0 V, I
= -10 V, R
GS
, I
D
S
D
= -1.3 A
DS
= -250 µA
= -250 µA
D
D
D
D
GS
DS
DS
GS
b. 125
D
= -1 A
GEN
= -6 A
= 0 V
= -6 A
= -6 A,
= -5 A
pad of 2oz copper.
= 0 V
= 0 V
= -5 V
= 0 V,
= 6
O
C/W on a 0.02 in
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
2
C
Min
-30
-20
-1
0.025
0.033
0.034
1540
-0.73
Typ
14.5
-1.7
400
170
-21
16
13
22
47
18
4
5
4
c. 135
pad of 2oz copper.
O
C/W on a 0.003 in
0.032
0.051
0.045
Max
-100
100
-1.3
-1.2
-10
24
35
75
30
20
-1
-3
JC
is guaranteed by
Si4925DY Rev.A
mV/
mV/
Units
nC
nC
nC
µA
µA
nA
nA
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
2
o
o
C
C