SI1029X Vishay Siliconix, SI1029X Datasheet - Page 3

• Manufacturer Part Number: SI1029X
• Description: Complementary N- and P-Channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71435
S-03518—Rev. A, 11-Apr-01
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
0.0
0
0
V
V
GS
V
I
GS
D
DS
On-Resistance vs. Drain Current
0.1
= 250 mA
= 4.5 V
= 10 thru 7 V
200
= 10 V
1
V
DS
Q
Output Characteristics
g
I
D
– Drain-to-Source Voltage (V)
0.2
– Total Gate Charge (nC)
– Drain Current (mA)
Gate Charge
400
2
0.3
600
3
0.4
V
GS
800
= 10 V
4
6 V
0.5
5 V
4 V
3 V
1000
0.6
5
_
New Product
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
50
40
30
20
10
0
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
f = 1 MHz
GS
1
V
= 0 V
5
C
GS
T
V
Transfer Characteristics
rss
J
DS
0
– Gate-to-Source Voltage (V)
– Junction Temperature (_C)
C
– Drain-to-Source Voltage (V)
2
V
iss
C
GS
25
Capacitance
10
oss
= 10 V @ 500 mA
Vishay Siliconix
T
J
50
3
= –55_C
15
75
4
V
@ 200 mA
Si1029X
100
GS
www.vishay.com
125_C
20
= 4.5 V
5
125
25_C
150
25
6
3