SI1029X Vishay Siliconix, SI1029X Datasheet - Page 6

• Manufacturer Part Number: SI1029X
• Description: Complementary N- and P-Channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1029X
Vishay Siliconix
www.vishay.com
6
1000
100
10
1
0.00
0.01
0.1
2
1
10
V
Source-Drain Diode Forward Voltage
GS
–4
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
J
= 0 V
V
= 125_C
0.3
SD
– Source-to-Drain Voltage (V)
0.6
10
Single Pulse
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
0.9
J
T
= –55_C
J
–0.0
–0.1
–0.2
–0.3
= 25_C
0.5
0.4
0.3
0.2
0.1
–50
Threshold Voltage Variance Over Temperature
10
1.2
–2
–25
1.5
T
Square Wave Pulse Duration (sec)
_
_
J
0
I
New Product
D
– Junction Temperature (_C)
= 250 mA
25
10
–1
50
75
100
1
10
8
6
4
2
0
0
125
On-Resistance vs. Gate-Source Voltage
150
2
V
GS
10
I
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
D
– Gate-to-Source Voltage (V)
P
DM
= 200 mA
JM
– T
4
t
1
A
= P
t
2
DM
Z
thJA
6
thJA
100
S-03518—Rev. A, 11-Apr-01
t
t
Document Number: 71435
1
2
(t)
= 500_C/W
I
D
= 500 mA
8
600
10