SI1419DH Vishay Siliconix, SI1419DH Datasheet
SI1419DH
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SI1419DH Summary of contents
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... This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73330 S-50412Rev. A, 14-Mar-05 SPICE Device Model Si1419DH P-Channel 200-V (D-S) MOSFET • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • ...
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... SPICE Device Model Si1419DH www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. ...
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... COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 73330 S-50412Rev. A, 14-Mar-05 SPICE Device Model Si1419DH Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...