SI1419DH Vishay Siliconix, SI1419DH Datasheet - Page 2

• Manufacturer Part Number: SI1419DH
• Description: P-Channel 200-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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SPICE Device Model Si1419DH
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
J
a
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
V
Q
Q
GS(th)
D(on)
g
Q
SD
fs
gs
gd
g
V
DS
= −100 V, V
V
V
V
V
V
I
DS
GS
DS
DS
Test Condition
S
GS
= −0.4 A, V
= −5 V, V
= −10 V, I
= −10 V, I
= V
= −6 V, I
GS
GS
, I
= −10 V, I
D
D
= −250 µA
GS
D
D
GS
= −0.4 A
= −0.4 A
= −0.4 A
= −10 V
= 0 V
D
= −0.4 A
Simulated
Data
−0.72
3.95
4.08
3.1
1.3
0.5
3.6
0.8
1.3
Measured
S-50412Rev. A, 14-Mar-05
Data
−0.80
3.98
4.06
Document Number: 73330
4.1
0.8
1.3
1
Unit
nC
V
A
Ω
S
V