SI1926DL Vishay Siliconix, SI1926DL Datasheet - Page 4

• Manufacturer Part Number: SI1926DL
• Description: Dual N-Channel 60 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si1926DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
2.0
1.8
1.6
1.4
1.2
1.0
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.3
T
V
A
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
0.6
- Temperature (°C)
50
I
D
0.9
T
= 250 µA
75
A
= 25 °C
0.001
0.01
0.1
100
1
0.1
1.2
* V
125
Limited by R
GS
Single Pulse
T
A
= 25 °C
150
V
minimum V
1.5
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
DS(on)
10
5.0
4.0
3.0
2.0
1.0
0.0
5
4
3
2
1
0
10
is specified
3
-3
10
4
R
-2
100
10 ms
100 ms
10 s
1 s
DC
DS(on)
V
GS
5
Single Pulse Power
- Gate-to-Source Voltage (V)
10
vs. V
T
-1
A
= 25 °C
6
Time (s)
GS
S10-0792-Rev. D, 05-Apr-10
vs. Temperature
1
Document Number: 73684
T
A
7
= 125 °C
I
D
10
= 0.5 A
8
100
9
600
10
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