SI3477DV Vishay Siliconix, SI3477DV Datasheet - Page 3

• Manufacturer Part Number: SI3477DV
• Description: P-Channel 12 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70865
S10-1536-Rev. A, 19-Jul-10
0.06
0.05
0.04
0.03
0.02
0.01
10
40
30
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 9 A
0.5
V
10
GS
V
10
= 1.8 V
DS
V
Output Characteristics
Q
DS
g
- Drain-to-Source Voltage (V)
V
1.0
20
I
- Total Gate Charge (nC)
D
V
= 3 V
GS
- Drain Current (A)
DS
Gate Charge
= 5 V thru 2.5 V
= 6 V
20
1.5
30
V
GS
2.0
V
40
V
V
= 2 V
GS
GS
DS
V
30
GS
= 2.5 V
= 4.5 V
= 9.6 V
V
GS
= 1.5 V
2.5
50
= 1 V
New Product
3.0
40
60
4000
3000
2000
1000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
0
8
6
4
2
0
- 50
0.0
0
C
oss
On-Resistance vs. Junction Temperature
C
- 25
rss
2
0.3
V
V
V
DS
GS
GS
T
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 4.5 V, 2.5 V; I
- Junction Temperature (°C)
T
4
C
25
Capacitance
0.6
= 125 °C
C
iss
50
6
T
Vishay Siliconix
C
V
= 25 °C
D
GS
0.9
= 9 A
75
= 1.8 V; I
Si3477DV
8
100
www.vishay.com
T
1.2
C
D
10
= - 55 °C
= 2.2 A
125
150
1.5
12
3
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