SI3477DV Vishay Siliconix, SI3477DV Datasheet - Page 4

• Manufacturer Part Number: SI3477DV
• Description: P-Channel 12 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si3477DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
T
I
J
D
J
= 150 °C
25
- Temperature (°C)
= 250 μA
0.6
50
75
T
0.01
0.8
J
100
0.1
10
= 25 °C
1
0.1
100
Limited by R
Single Pulse
* V
T
1.0
A
GS
125
= 25 °C
> minimum V
V
New Product
DS
150
1.2
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
1
BVDSS Limited
*
GS
at which R
DS(on)
10
0.06
0.05
0.04
0.03
0.02
0.01
100 μs
10 s
DC
1 ms
10 ms
100 ms
30
25
20
15
10
is specified
5
0
0
0.001
0
I
D
= 9 A; T
On-Resistance vs. Gate-to-Source Voltage
I
D
0.01
= 2.2 A; T
100
1
J
V
= 25 °C
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
J
= 25 °C
2
I
I
D
D
= 9 A; T
= 2.2 A; T
Time (s)
1
S10-1536-Rev. A, 19-Jul-10
Document Number: 70865
J
3
= 125 °C
J
10
= 125 °C
4
100
1000
5
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