SI3590DV Vishay Siliconix, SI3590DV Datasheet - Page 6

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SI3590DV

Manufacturer Part Number
SI3590DV
Description
N- and P-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Si3590DV
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.75
0.60
0.45
0.30
0.15
0.00
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
V
I
1
D
V
DS
GS
= 2 A
On-Resistance vs. Drain Current
1
V
= 15 V
1
= 2.5 V
DS
2
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
V
- Drain Current (A)
3
Gate Charge
2
GS
2
= 5 thru 3.5 V
3 V
4
3
3
2.5 V
5
V
GS
6
1.5 V
= 4.5 V
4
4
2 V
7
5
8
5
New Product
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
7
6
5
4
3
2
1
0
0
-50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
-25
0.5
V
V
6
GS
DS
T
Transfer Characteristics
J
V
I
0
D
1.0
GS
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 2 A
= 4.5 V
25
Capacitance
C
12
1.5
oss
C
50
iss
2.0
S-21979—Rev. A, 04-Nov-02
T
25_C
18
C
Document Number: 72032
75
= -55_C
P−CHANNEL
2.5
100
24
3.0
125_C
125
150
3.5
30

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