SI3590DV Vishay Siliconix, SI3590DV Datasheet - Page 7

• Manufacturer Part Number: SI3590DV
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72032
S-21979—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.1
-0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
1
0.00
-50
-25
Source-Drain Diode Forward Voltage
T
J
V
= 150_C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
= 250 mA
- Temperature (_C)
25
0.6
50
0.9
T
75
J
= 25_C
100
1.2
0.01
100
0.1
10
1
0.1
125
Safe Operating Area, Junction-to-Case
1.5
150
Limited
I
D(on)
V
New Product
r
DS
DS(on)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
Limited
= 25_C
BV
DSS
Limited
10
0.5
0.4
0.3
0.2
0.1
0.0
I
8
6
4
2
0
0.01
DM
0
Limited
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 ms
10 ms
100 ms
10 s, 1 s
dc
1
V
100
GS
0.1
2
- Gate-to-Source Voltage (V)
Time (sec)
3
Vishay Siliconix
I
D
1
4
= 2 A
Si3590DV
P−CHANNEL
5
www.vishay.com
10
6
30
7
7