SI3900DV Vishay Siliconix, SI3900DV Datasheet - Page 2

• Manufacturer Part Number: SI3900DV
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si3900DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
2
a
V
GS
3 V
= 4.5 thru 3.5 V
2.5 V
1.5 V
3
_
2 V
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
4
_
5
V
V
I
DS
D
DS
^ 1 A, V
V
= 10 V, V
I
F
DS
= 16 V, V
V
V
V
V
V
V
V
I
= 3.0 A, di/dt = 100 A/ms
DS
S
DS
V
Test Condition
GS
GS
DS
DD
DD
= 0 V, V
DS
= 1.05 A, V
w 5 V, V
= V
= 2.5 V, I
= 16 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 5 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
D
GS
D
= "12 V
D
GS
GS
= 250 mA
L
L
= 2.4 A
= 2.4 A
= 1.0 A
= 10 W
= 10 W
= 4.5 V
= 0 V
= 0 V
J
D
G
= 85_C
= 2.4 A
= 6 W
10
8
6
4
2
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
Min
0.6
– Gate-to-Source Voltage (V)
5
1.5
0.100
0.160
Typ
2.0
0.79
2.1
0.3
0.4
T
10
30
14
30
5
6
C
25_C
S-03511—Rev. B, 16-Apr-01
= –55_C
Document Number: 71178
2.5
"100
Max
0.125
0.200
1.10
4.0
10
17
50
25
12
50
1
3.0
125_C
3.5
Unit
nA
m
mA
nC
ns
V
A
W
W
S
V
4.0