SI5445BDC Vishay Siliconix, SI5445BDC Datasheet
SI5445BDC
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SI5445BDC Summary of contents
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... V = −2 0.060 @ V = −1 1206-8 ChipFETr Bottom View Ordering Information: Si5445BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current a ...
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... Si5445BDC Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 73251 S-50133—Rev. A, 24-Jan-05 New Product 25_C J 0.6 0.8 1.0 1.2 Si5445BDC Vishay Siliconix Capacitance 2000 1600 C iss 1200 800 C oss 400 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs ...
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... Si5445BDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product I = 250 100 125 150 Safe Operating Area 100 *r Limited ...
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... S-50133—Rev. A, 24-Jan-05 New Product Normalized Thermal Transient Impedance, Junction-to-Foot −3 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si5445BDC Vishay Siliconix − www.vishay.com 5 Datasheet pdf - http://www.DataSheet4U.net/ ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...