SI5445BDC Vishay Siliconix, SI5445BDC Datasheet - Page 4

• Manufacturer Part Number: SI5445BDC
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si5445BDC
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
Single Pulse
−3
50
I
D
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
10
1
0.1
−2
*V
125
*r
Limited
GS
DS(on)
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
u minimum V
C
150
V
= 25_C
DS
Limited
New Product
− Drain-to-Source Voltage (V)
Safe Operating Area
10
−1
GS
at which r
1
BV
DSS
DS(on)
Limited
1
50
40
30
20
10
0
is specified
10
I
DM
−3
Limited
10
−2
10
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
10
− T
−1
Time (sec)
t
A
1
= P
t
2
DM
1
Z
thJA
100
thJA
t
t
S-50133—Rev. A, 24-Jan-05
1
2
(t)
Document Number: 73251
= 80_C/W
10
100
600
600
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