ZXMC3A16DN8 Zetex Semiconductors, ZXMC3A16DN8 Datasheet - Page 2

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ZXMC3A16DN8

Manufacturer Part Number
ZXMC3A16DN8
Description
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ZXMC3A16DN8
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
(b)(e)
(a)(d)
(b)(d)
(c)
@V
@V
GS
GS
GS
(a)(d)
(b)(d)
(a)(e)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=70 C
=25 C
=25 C
(b)
(b)(d)
(a)(d)
(b)(d)
10 sec.
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
SYMBOL
R
R
R
D
DM
S
SM
DSS
GS
D
D
D
j
θJA
θJA
θJA
:T
stg
N-Channel P-Channel
6.4
5.1
4.9
3.4
30
30
30
20
PROVISIONAL ISSUE F - JULY 2004
-55 to +150
VALUE
1.25
1.8
2.1
10
14
17
100
70
60
-5.4
-4.3
-4.1
-3.2
-30
-25
-25
20
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C
W
W
W
V
V
A
A
A
A
A
A

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