ZXMC3A16DN8 Zetex Semiconductors, ZXMC3A16DN8 Datasheet - Page 4

• Manufacturer Part Number: ZXMC3A16DN8
• Description: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC3A16DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
30
1
TYP.
13.5
21.6
17.5
0.85
17.8
11.6
796
137
3.0
6.4
9.4
9.2
2.3
3.1
84
MAX.
0.035
0.050
0.95
100
0.5
PROVISIONAL ISSUE F - JULY 2004
UNIT CONDITIONS
µA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=3.5A
=3.5A
=250µA, V
=250µA, V
GS
=25°C, I
=25°C, I
=6.0Ω, V
=30V, V
=15V,I
=25 V, V
=15V,V
=15V,V
=10V, I
=4.5V, I
=0V
=15V, I
=±20V, V
D
S
F
D
GS
GS
=3.5A,
=9A
GS
=5.1A,
D
D
GS
=9A
GS
DS
GS
=3.5A
=7.4A
=5V,
=10V,
DS
=10V
=0V
=0V
= V
=0V,
=0V
GS