ZXMC3A18DN8 Zetex Semiconductors, ZXMC3A18DN8 Datasheet - Page 2

• Manufacturer Part Number: ZXMC3A18DN8
• Description: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d = 0.02. Refer to Transient Thermal Impedance
(d) For device with one active die.
(e) For device with two active die running at equal power.
ZXMC3A18DN8
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
graph.
S E M I C O N D U C T O R S
(V
(V
(V
GS
GS
GS
(c)
(a) (d)
(a) (e)
(b) (d)
= 10V; T
= 10V; T
= 10V; T
A
A
A
=25°C
=25°C
=25°C
A
A
A
(a) (e)
(a) (d)
(b) (d)
=25°C)
=70°C)
=25°C)
(c)
(b)(d)
(b)(d)
(a)(d)
(b)
10 sec.
2
SYMBOL
T
V
j
SYMBOL
V
I
I
, T
P
P
P
DSS
DM
SM
I
I
GS
D
S
R
R
R
D
D
D
stg
JA
JA
JA
ADVANCE INFORMATION
LIMIT
±20
7.6
6.1
5.8
3.6
30
37
37
-55 to +150
VALUE
1.25
100
1.8
2.1
70
60
10
14
17
DRAFT ISSUE C - JUNE 2003
UNIT
±20
-6.3
-5.0
-4.8
tbd
-30
-30
30
°C/W
°C/W
°C/W
UNIT
mW/°C
mW/°C
mW/°C
°C
W
W
W
A
A
A
V
V
A
A
A