ZXMC3A18DN8 Zetex Semiconductors, ZXMC3A18DN8 Datasheet - Page 7

• Manufacturer Part Number: ZXMC3A18DN8
• Description: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ADVANCE INFORMATION
DRAFT ISSUE C - JUNE 2003
P-Channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300ms; Duty cycle
7
-30
-1.0
MIN.
tbd
1630
320
210
9.2
18
96
60
tbd
41
5.2
7.3
tbd
tbd
TYP.
2%.
-1.0
100
0.035
0.050
-0.95
MAX. UNIT CONDITIONS
ZXMC3A18DN8
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
GS
DS
DS
GS
= -250 A, V
= 250 A, V
= -5.0A
= -5.0A
=25°C, I
=25°C, I
S E M I C O N D U C T O R S
≅ 6.0 ,
=-30V, V
= -15V, I
= -15V, V
= -15V, V
= -15V, V
=±20V, V
= -10V, I
= -4.5V, I
= -15V, I
=0V
= 10V
S
F
= -tbd,
= -tbd,
D
D
GS
D
DS
D
GS
GS
GS
DS
= -4.8A
= -4.8A
=-1A
GS
= -4.0A
=0V
=V
=0V
= -5V
= -10V
=0V
=0V
GS