ZXMN6A11DN8 Zetex Semiconductors, ZXMN6A11DN8 Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A11DN8
• Description: 60V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
ZXMN6A11DN8
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
V GS =10V; T A =70°C(b)
V GS =10V; T A =25°C(a)
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j :T stg
SYMBOL
R JA
R JA
R JA
2
-55 to +150
VALUE
LIMIT
1.25
100
2.7
2.2
2.1
8.3
3.2
8.3
1.8
2.1
60
10
14
17
70
60
20
ISSUE 1 - MARCH 2002
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
mW
mW
mW
°C
V
V
A
A
A
A