ZXMN6A11DN8 Zetex Semiconductors, ZXMN6A11DN8 Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A11DN8
• Description: 60V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A11DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
V SD
t rr
Q rr
2% .
MIN.
4
1.0
60
TYP.
35.0
17.0
1.95
1.25
0.86
0.85
21.5
20.5
330
4.9
3.5
8.2
4.6
3.0
5.7
MAX.
0.14
0.25
0.95
100
1
UNIT
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - MARCH 2002
I D =250 A, V GS =0V
V DS =60V, V GS =0V
I
V GS =10V, I D =4.4A
V GS =4.5V, I D =3.8A
V DS =15V,I D =2.5A
V DS =40 V, V GS =0V,
f=1MHz
V DD =15V, I D =2.5A
R G =6.0 ,V GS =10V
(refer to test circuit)
V DS =15V, V GS =5V,
I D =2.5A
V DS =15V,V GS =10V,
I
(refer to test circuit)
T J =25°C, I S =2.8A,
V GS =0V
T J =25°C, I F =2.5A,
di/dt= 100A/ s
V GS = 20V, V DS =0V
D
D
=2.5A
=250 A, V DS = V GS
CONDITIONS.