FM18L08-70-PG Ramtron Corporation, FM18L08-70-PG Datasheet - Page 6

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FM18L08-70-PG

Manufacturer Part Number
FM18L08-70-PG
Description
256kb Bytewide FRAM Memory
Manufacturer
Ramtron Corporation
Datasheet

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Electrical Specifications
Absolute Maximum Ratings
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions (T
Notes
1.
2.
3.
4.
Rev. 3.4
July 2007
V
I
I
I
I
I
V
V
V
V
Symbol
DD
SB1
SB2
LI
LO
DD
IH
IL
OH
OL
V
V
V
V
DD
DD
DD
IN
, V
= 3.65V, /CE cycling at minimum cycle time. All inputs at CMOS levels, all outputs unloaded.
= 3.65V, /CE at V
= 3.65V, /CE at V
Symbol
T
OUT
V
T
V
V
LEAD
STG
ESD
DD
IN
Power Supply
V
Standby Current – TTL
Standby Current – CMOS
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage (
Output Low Voltage (
between V
DD
Supply Current – Active
DD
IH
DD
and V
, All other pins at TTL levels.
Power Supply Voltage with respect to V
Voltage on any signal pin with respect to V
Storage temperature
Lead temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
Package Moisture Sensitivity Level
Parameter
, All other pins at CMOS levels.
- Human Body Model
- Machine Model
A
SS
= -40 C to + 85 C, V
.
I
I
OL
OH
= 3.2 mA)
= -1.0 mA)
Description
(JEDEC Std JESD22-A115-A)
(JEDEC Std JESD22-A114-B)
DD
= 3.0V to 3.65V)
Min
-0.5
3.0
2.0
2.4
-
-
-
-
SS
SS
Typ
7
7
-1.0V to +5.0V and V
V
MSL-1 (SOIC/DIP)
DD
Max
3.65
-55 C to +125 C
400
0.8
0.4
MSL-2 (TSOP)
15
15
10
10
-1.0V to +5.0V
-
+ 0.5
< V
Ratings
300 C
400V
4kV
DD
+1V
Units
mA
V
V
V
V
V
A
A
A
A
IN
FM18L08
Notes
1
2
3
4
4
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