74HCT7403N,112 NXP Semiconductors, 74HCT7403N,112 Datasheet - Page 17
![IC FIFO REGISTER 64X4 3ST 16DIP](/photos/6/52/65287/568-16-dip_sot38-4_sml.jpg)
74HCT7403N,112
Manufacturer Part Number
74HCT7403N,112
Description
IC FIFO REGISTER 64X4 3ST 16DIP
Manufacturer
NXP Semiconductors
Series
74HCTr
Datasheets
1.74HCT4046ADB112.pdf
(19 pages)
2.74HCT4046ADB112.pdf
(23 pages)
3.74HCT7403N112.pdf
(28 pages)
Specifications of 74HCT7403N,112
Function
Asynchronous, Synchronous
Memory Size
256 (64 x 4)
Data Rate
15MHz
Voltage - Supply
4.5 V ~ 5.5 V
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Access Time
-
Other names
568-2904-5
933999380112
933999380112
Philips Semiconductors
Shift-in operation; high-speed burst mode
Note to Fig.11
In the high-speed mode, the burst-in rate is determined by the minimum shift-in HIGH and shift-in LOW specifications.
The DIR status flag is a don't care condition, and a shift-in pulse can be applied regardless of the flag. A SI pulse which
would overflow the storage capacity of the FIFO is ignored.
September 1993
handbook, full pagewidth
4-Bit x 64-word FIFO register; 3-state
(1) HC : V
Fig.11 Waveforms showing SI minimum pulse width and maximum pulse frequency, in high-speed shift-in burst
HCT: V
mode.
M
M
= 50%; V
= 1.3 V; V
I
SI INPUT
DIR OUTPUT
D n INPUT
= GND to V
I
= GND to 3 V.
CC
.
V M
(1)
t W
1/ f max
17
MGA662
74HC/HCT7403
Product specification