LMX2370 National Semiconductor, LMX2370 Datasheet - Page 4

• Manufacturer Part Number: LMX2370
• Description: PLLatinum Dual Frequency Synthesizer for RF Personal Communications
• Manufacturer: National Semiconductor

www.national.com
GENERAL
I
I
f
f
Zf
Zf
f
Pf
OSCILLATOR INPUT
OSC
Z
V
I
I
CC
CC-PWDN
IN
IN
IH
IL
IN
OSC
IN
IN
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
Voltage on any pin with
Storage Temperature Range (T
Lead Temperature (solder, 4 sec.) (T
ESD - Human Body Model (Note 2)
Electrical Characteristics
Symbol
IN
Symbol
1
2
1, Pf
OSC
V
V
Vp1
Vp2
Vµc
GND = 0V (V
Main
Aux
in
CC
CC
1
2
IN
2
Power Supply
Current
Power Down Current
Main PLL
Operating
Frequency
Auxiliary PLL Operating
Frequency
Main PLL Input Impedance
Aux Input Impedance
Phase Detector Frequency
RF Input Sensitivity
Reference Oscillator Input
Operating Frequency
OSC Input Impedance
Oscillator Input Sensitivity
OSC
OSC
I
)
in
in
Input Current
Input Current
Parameter
Parameter
S
)
LMX2370
LMX2371
LMX2372
LMX2370
LMX2370
LMX2371
LMX2372
/71/72
L
)
−0.3V to V
(V
−65˚C to +150˚C
CC
−0.3V to 6.5V
−0.3V to 6.5V
−0.3V to 6.5V
−0.3V to 6.5V
−0.3V to 6.5V
(Notes 1, 2)
Main = On, Aux = On
Main = On, Aux = On
Main = On, Aux = On
Aux Only
EN_Main, EN_Aux = 0
P = 32/33
P = 16/17
P = 32/33
P = 16/17
P = 16/17
P = 8/9
P = 16/17
P = 8/9
RF On, f
RF Off, f
f
2.7
3.6
OSC On, Freq = 10 MHz
OSC Off, Freq = 10 MHz
OSC
V
V
IN
IH
IL
= Vp = Vµc = 3.0V; −40˚C
= 120 MHz
= 0, V
= V
CC
in
+260˚C
V
V
CC
CC
+0.3V
CC
IN
IN
TBD
CC
= 5.5V
= 1800 MHz
= 1800 MHz
Conditions
Conditions
3.6V
5.5V
= 5.5V
4
Recommended Operating
Conditions
Power Supply Voltage
Operating Temperature (T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Ratings indicate conditions for which the de-
vice is intended to be functional, but do not guarantee specific performance
limits. For guaranteed specifications and test conditions, see the Electrical
Characteristics. The guaranteed specifications apply only for the test condi-
tions listed.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should only be done at ESD
free workstations.
Note 3: V
V
V
V
Vp1
Vp2
Vµc
CC
CC
CC
1
2
1–V
CC
<
CC
is defined as V
T
2
A
<
85˚C except as specified).
(Note 3)
−100
Min
Min
−15
−10
0.5
1.2
1.2
45
45
45
45
45
45
2
CC
= V
A
)
CC
1 = V
Value
Value
TBD
TBD
TBD
TBD
TBD
Typ
Typ
15
CC
6
5
4
2
2.
−40˚C to +85˚C
1200
1200
1200
1200
Max
3.25
Max
V
100
550
550
8.5
7.5
6.0
2.5
2.0
50
10
50
−0.2V to 0.2V
0
0
CC
1.72V to V
2.7V to 5.5V
2.7V to 5.5V
V
V
CC
CC
to 5.5V
to 5.5V
Unit
GHz
MHz
GHz
MHz
MHz
MHz
MHz
MHz
MHz
dBm
dBm
Unit
MHz
V
mA
mA
mA
mA
µA
k
k
µA
µA
PP
CC