MRF10150 Motorola, MRF10150 Datasheet - Page 2

• Manufacturer Part Number: MRF10150
• Description: MICROWAVE POWER TRANSISTORS
• Manufacturer: Motorola

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
FUNCTIONAL TESTS
MRF10150
2
Collector–Emitter Breakdown Voltage (I C = 60 mAdc, V BE = 0)
Collector–Base Breakdown Voltage (I C = 60 mAdc, I E = 0)
Emitter–Base Breakdown Voltage (I E = 10 mAdc, I C = 0)
Collector Cutoff Current (V CB = 36 Vdc, I E = 0)
DC Current Gain (I C = 5.0 Adc, V CE = 5.0 Vdc)
Common–Base Amplifier Power Gain
Collector Efficiency
Load Mismatch
INPUT
(V CC = 50 Vdc, P out = 150 W Peak, f = 1090 MHz)
(V CC = 50 Vdc, P out = 150 W Peak, f = 1090 MHz)
(V CC = 50 Vdc, P out = 150 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
RF
.081
.334
0.943
Characteristic
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 F
C4 — 100 F, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8 ID, 0.18 Long
1.383
.15
Z1
1.0
Z2
.489
.081
(T C = 25 C unless otherwise noted.)
Z3
Z5
.081
Z4
1.803
.625
Figure 1. Test Circuit
D.U.T.
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
L1
G PB
h FE
Z6
.522
Z1–Z9 — Microstrip, See Details
Board Material — Teflon Glass Laminate
Dielectric Thickness = 0.030
r = 2.55, 2 Oz. Copper
Z7
C2
1.751
.275
Min
3.5
9.5
65
65
20
40
—
Z8
No Degradation in Output Power
C3
Z9
.081
.583
MOTOROLA RF DEVICE DATA
Typ
—
—
—
—
—
10
—
C1
C4
.081
.787
+
.37
Max
25
—
—
—
—
—
—
.100
+
–
OUTPUT
.363
mAdc
.081
Unit
Vdc
Vdc
Vdc
RF
dB
—
%