MPSH11-D27Z Fairchild Semiconductor, MPSH11-D27Z Datasheet

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MPSH11-D27Z

Manufacturer Part Number
MPSH11-D27Z
Description
Mpsh11/mmbth11npn Rf Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
2002 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
NPN RF Transistor
, T
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 A to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
Absolute Maximum Ratings*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
C
E
B
MPSH11
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
SOT-23
Mark: 3G
MMBTH11
MPSH11
C
350
125
357
2.8
Max
-55 to +150
B
Value
*MMBTH11
3.0
50
25
30
225
556
1.8
E
MPSH11/MMBTH11, Rev. B
Units
Units
mW/ C
mA
mW
C/W
C/W
V
V
V
C

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MPSH11-D27Z Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2002 Fairchild Semiconductor Corporation MMBTH11 C TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted MPSH11 350 2.8 125 357 E B Value Units 3 -55 to +150 C Max Units *MMBTH11 225 mW 1.8 mW/ C C/W 556 C/W MPSH11/MMBTH11, Rev. B ...

Page 2

... MHz 4.0 mA 31.8 MHz Collector-Emitter Saturation Voltage vs Collector Current 0 0.15 0.1 0. °C 10 100 0 NPN RF Transistor (continued) Min Max Units 3.0 V 100 nA 100 nA 60 0.5 V 0.95 V 650 MHz 0.7 pF 0.6 0.9 pF 9.0 pS 125 ° COLLECTOR CURRENT (mA) MPSH11/MMBTH11, Rev ...

Page 3

... Collector Current - 40 °C 25 125 ° 5. 100 - COLLECTOR CURRENT (mA) TO- 100 125 150 TEMPERATURE ( C) ° T 1000 MHz 900 MHz 800 MHz 700 MHz 600 MHz 500 MHz 300 MHz 400 MHz 200 MHz 100 MHz 1 10 100 MPSH11/MMBTH11, Rev. B ...

Page 4

... Forward Transfer Admittance vs Collector Current 120 V = 10V 200 MHz 100 COLLECTOR CURRENT (mA) NPN RF Transistor (continued) Collector Current Frequency 200 500 1000 f - FREQUENCY (MHz MPSH11/MMBTH11, Rev ...

Page 5

... MHz 0.5 0.4 0.3 0.2 0 COLLECTOR CURRENT (mA) C Reverse Transfer Admittance vs Frequency 1 15V 7 0.8 0.6 0.4 0 100 f - FREQUENCY (MHz) NPN RF Transistor (continued 200 500 1000 f - FREQUENCY (MHz 200 500 1000 MPSH11/MMBTH11, Rev. B ...

Page 6

... Conversion Gain vs Collector Current COLLECTOR CURRENT (mA) C NPN RF Transistor (continued Frequency 200 500 1000 f - FREQUENCY (MHz MHz 200 MHz 245 MHz 15V CE FIG MPSH11/MMBTH11, Rev ...

Page 7

... FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit 270 1000 pF 1000 0.8-10 pF 1000 pF 390 L1 - Ohmite Z-235 RFC turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side BB NPN RF Transistor (continued) 200 mHz Output into 50 MPSH11/MMBTH11, Rev. B ...

Page 8

... Toroid 4:1 ratio No. 22 wire 8 turns Pri. 2 turns Sec mHz Output into Ohmite RFC Z235 T1 - Primary 5 turns No. 34 wire 1/4 inch diameter. Secondary runs No. 34 wire close wound over a Q100 core (10.7 mHz). When terminated on secondary side with 50 primary measures 1.5 K, -25 pF. MPSH11/MMBTH11, Rev ...

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