MRF21090SR3 Motorola, MRF21090SR3 Datasheet - Page 2

• Manufacturer Part Number: MRF21090SR3
• Description: RF Power Field Effect Transistors
• Manufacturer: Motorola

ESD PROTECTION CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
(1) Part is internally matched both on input and output.
MRF21090R3 MRF21090SR3
2
Human Body Model
Machine Model
Drain - Source Breakdown Voltage
Gate - Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Forward Transconductance
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance (1)
Common - Source Amplifier Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Common - Source Amplifier Power Gain
Drain Efficiency
Output Mismatch Stress
(V
(V
(V
(V
(V
(V
(V
(V
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
(V
(V
VSWR = 10:1, All Phase Angles at Frequency of Tests)
GS
GS
DS
DS
DS
DS
GS
DS
DD
DD
DD
DD
DD
DD
DD
= 28 Vdc, V
= 10 Vdc, I
= 10 V, I
= 28 V, I
= 28 Vdc, V
= 0 Vdc, I
= 5 Vdc, V
= 10 V, I
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
D
D
D
D
= 300 µA)
= 750 mA)
= 1 A)
DS
D
= 100 µAdc)
GS
GS
out
out
out
out
out
out
out
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0, f = 1 MHz)
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
= 90 W PEP, I
= 75 W CW, I
= 75 W CW, I
= 90 W CW, I
Characteristic
Test Conditions
DQ
DQ
DQ
DQ
DQ
DQ
DQ
= 750 mA, f = 2170 MHz)
= 750 mA, f = 2170 MHz)
= 750 mA, f = 2110 MHz,
Freescale Semiconductor, Inc.
= 750 mA, f1 = 2110.0 MHz,
= 750 mA, f1 = 2110.0 MHz,
= 750 mA, f1 = 2110.0 MHz,
= 750 mA, f1 = 2110.0 MHz,
(T
C
For More Information On This Product,
= 25°C unless otherwise noted)
Go to: www.freescale.com
MRF21090R3
MRF21090SR3
MRF21090R3
MRF21090SR3
V
Symbol
V
V
V
(BR)DSS
I
I
DS(on)
C
IMD
GS(th)
GS(Q)
G
G
IRL
GSS
DSS
g
Ψ
η
η
rss
fs
ps
ps
Min
65
—
—
—
—
—
10
30
—
—
—
—
2
3
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
Before and After Test
11.7
11.7
Typ
- 30
- 12
7.2
3.8
0.1
4.2
33
41
—
—
—
M3 (Minimum)
M4 (Minimum)
3
2 (Minimum)
1 (Minimum)
Class
- 27.5
Max
- 9.0
0.6
10
—
—
—
—
—
—
—
1
4
5
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
dB
pF
%
%
S