MRF5S19150SR3 Motorola, MRF5S19150SR3 Datasheet - Page 6

• Manufacturer Part Number: MRF5S19150SR3
• Description: RF Power Field Effect Transistors
• Manufacturer: Motorola

MRF5S19150R3 MRF5S19150SR3
−100
6
−10
−20
−30
−40
−50
−60
−70
−80
−90
0
−7.5
−6
Figure 9. 2 - Carrier N - CDMA Spectrum
Integrated BW
1.2288 MHz
−4.5
−IM3 @
−ACPR @ 30 kHz
Integrated BW
−3
f, FREQUENCY (MHz)
−1.5
Channel BW
1.2288 MHz
0
45
40
35
30
25
20
15
10
+ACPR @ 30 kHz
5
0
Integrated BW
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power
1.5
For More Information On This Product,
Gain, Drain Efficiency versus Output Power
Freescale Semiconductor, Inc.
V
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
DD
Integrated BW
= 28 Vdc, I
3
1.2288 MHz
P
+IM3 @
out
TYPICAL CHARACTERISTICS
Go to: www.freescale.com
, OUTPUT POWER (WATTS) AVG., N−CDMA
4.5
1
DQ
= 1400 mA
6
7.5
Figure 10. MTBF Factor versus Junction Temperature
10
10
10
10
10
9
8
7
6
100
This above graph displays calculated MTBF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I
120
ACPR
G
T
IM3
J
ps
η
, JUNCTION TEMPERATURE (°C)
D
2
140
for MTBF in a particular application.
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
MOTOROLA RF DEVICE DATA
160
180
200
2
220