MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet - Page 8

• Manufacturer Part Number: MRF6S9060
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
8
21.5
20.5
19.5
18.5
22
21
20
19
18
Figure 13. MTTF Factor versus Junction Temperature
1
10
10
10
10
22
21
20
19
18
17
16
15
14
13
12
10
11
Figure 11. Power Gain and Drain Efficiency
T
9
8
7
6
η
90
0
C
D
= −30_C
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 12. Power Gain versus Output Power
10
100
85_C
TYPICAL CHARACTERISTICS
25_C
V
DD
20
P
versus CW Output Power
110
out
= 12 V
, OUTPUT POWER (WATTS) CW
30
P
120
T
out
J
, JUNCTION TEMPERATURE (°C)
16 V
D
40
, OUTPUT POWER (WATTS) CW
2
for MTTF in a particular application.
G
130
ps
10
50
140
V
I
f = 880 MHz
DQ
20 V
60
DD
= 450 mA
= 28 Vdc
150
70
24 V
80
160
90 100 110 120 130
170
28 V
−30_C
180
100
I
f = 880 MHz
DQ
85_C
190
= 450 mA
25_C
32 V
200
2
80
70
60
50
40
30
20
10
0
210
140
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RF Device Data