IRH8450 International Rectifier, IRH8450 Datasheet - Page 2

• Manufacturer Part Number: IRH8450
• Description: (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
• Manufacturer: International Rectifier

Electrical Characteristics
Thermal Resistance
IRH7450, IRH8450 Devices
IRH7450, IRH8450 Devices
Source-Drain Diode Ratings and Characteristics
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L D
L S
C iss
C oss
C rss
R thJC
R thJA
R thCS
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
—
Min Typ Max Units
—
—
—
—
—
Min
500
2.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.12
—
—
—
—
—
—
—
4000
0.83
Typ Max Units
330
0.6
5.0
—
—
—
—
—
13
52
30
—
—
—
—
—
—
—
—
—
—
—
—
1100
1.6
11
44
16
0.50
-100
0.45
250
100
150
190
190
130
4.0
75
—
—
50
30
45
—
—
—
—
—
°C/W
—
ns
V
A
C
S ( )
V/°C
nH
nA
pF
nC
ns
V
V
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
T j = 25°C, I F = 11A, di/dt
T
j
= 25°C, I S = 11A, V GS = 0V
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
V DS = 0.8 x Max Rating,V GS =0V
Reference to 25°C, I D = 1.0mA
Typical socket mount
V DS = V GS , I D = 1.0mA
V DS = 0.8 x Max Rating
V DS = Max Rating x 0.5
V DS > 15V, I DS = 7A
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V GS = 12V, I D = 11A
V GS = 0V, T J = 125°C
V GS = 0V, V DS = 25V
V GS = 12V, I D = 7.0A
V DD = 250V, I D = 11A,
Test Conditions
V GS =12V, I D =11A
V DD
V GS = -20V
V GS = 20V
R G = 2.35
f = 1.0MHz
Pre-Irradiation
50V
Modified MOSFET sym-
bol showing the internal
inductances.
www.irf.com
100A/ s