IRH8450 International Rectifier, IRH8450 Datasheet - Page 3

• Manufacturer Part Number: IRH8450
• Description: (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
• Manufacturer: International Rectifier

International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7450. Post-irradiation limits of the devices
irradiated to 1 x 10
IRH7450, IRH8450 Devices
Table 1. Low Dose Rate
Table 2. High Dose Rate
Table 3. Single Event Effects
www.irf.com
Radiation Performance of Rad Hard HEXFETs
BV
V
I
I
I
R
V
V
I PP
di/dt
L 1
DSS
GSS
GSS
SD
GS(th)
DS(on)1
DSS
DSS
Ion
Cu
Parameter
Drain-to-Source Voltage
Drain-to-Source Breakdown Voltage 500
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
Parameter
(MeV/mg/cm
DS
LET (Si)
bias condition equal to 80% of the
6
Rads (Si) are presented in Table
28
2
)
10
Min Typ Max Min Typ Max
27
—
—
—
11
(ions/cm
Fluence
Rads (Si)/sec 10
3x 10
—
—
—
8
5
400
15
—
—
100K Rads (Si) 1000K Rads (Si)
2
Min
5
2.0
)
IRH7450
—
—
—
—
—
Rads
133 —
—
—
—
12
Max
-100
0.45
100
4.0
1.6
50
—
Rads (Si)/sec
—
1, column 2, IRH8450. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
—
8
Range
(µm)
~43
1.25
Min
500
IRH8450
—
—
—
—
—
400
—
—
3
A/µsec Rate of rise of photo-current
Units
-100
Max
100
100
4.5
0.6
1.6
—
µH
V
A
Units
V
nA
µA
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
Circuit inductance required to limit di/dt
DS
V
V
(V)
275
Radiation Characteristics
Bias
V
T C = 25°C, I S =11A,V
DS
Test Conditions
=0.8 x Max Rating, V
Test Conditions
V
V
V
GS
GS
GS
= V
V
= 0V, I
V
= 12V, I
GS
GS
DS
= -20 V
, I
= 20V
V
D
D
GS
D
= 1.0mA
= 1.0mA
(V)
= 7.0A
-5
12
Bias
Rads (Si)/
GS
GS
= 0V
=0V
3