RN4992AFS TOSHIBA Semiconductor CORPORATION, RN4992AFS Datasheet - Page 3

• Manufacturer Part Number: RN4992AFS
• Description: Toshiba Transistor Silicon Npn/pnp Epitaxial Type Pct Process Transistor With Built-in Bias Resistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Input resistor
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Characteristic
Characteristic
Characteristic
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
V
V
Symbol
Symbol
Symbol
CE (sat)
CE (sat)
I
I
I
I
C
C
CBO
EBO
h
CBO
EBO
h
R1
FE
FE
ob
ob
V
V
V
I
V
V
V
V
I
V
C
C
CB
EB
CE
CB
CB
EB
CE
CB
= 5 mA, I
= −5 mA, I
3
= 50 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= −50 V, I
= −5 V, I
= −5 V, I
= −10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
E
E
= 0.25 mA
= 0
= 1 mA
E
E
= −0.25 mA
= 0
= 0, f = 1 MHz
= 0
=− 1 mA
= 0
= 0, f = 1 MHz
⎯
17.6
Min
120
Min
120
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
Typ.
0.7
0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
22
RN4992AFS
2006-03-14
−0.15
−100
−100
Max
0.15
Max
Max
26.4
100
100
700
400
⎯
⎯
Unit
Unit
Unit
kΩ
nA
nA
pF
nA
nA
pF
V
V