LM150QML National Semiconductor, LM150QML Datasheet - Page 4

• Manufacturer Part Number: LM150QML
• Description: LM150 - 3-Amp Adjustable Regulator
• Manufacturer: National Semiconductor

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V
T
I
I
∆I
∆V
V
RR
Adj
Q
Load
Reg
Drop
LM150 Electrical Characteristics
DC Parameters
Symbol
Symbol
Adj
The following conditions apply, unless otherwise specified.
DC: V
AC Parameters
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
to ambient thermal resistance), and T
number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Regulation is measured at a constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are
covered under the specifications for thermal regulation.
Note 4: Periodic Group C testing.
Note 5: These V
Note 6: Limits = 0.01% of V
Note 7: Limits = 0.3% of V
Note 8: Limits = 0.01% of V
Note 9: Represents worst case power dissipation of 30W.
Note 10: Limits are equivalent to 15mV
O
/ ∆t
Diff
Load Regulation
Thermal Regulation
Adjust Pin Current
Quiescent Current
Delta Adjustment Current
Current Limit
Long Term Stability
Voltage Dropout
Ripple Rejection
= 5V, V
O
conditions are worst case
O
= V
Parameter
Parameter
O
O
O
@
Ref
@
@
25˚C, 1.0%
25˚C, 0.05%
25˚C per Watt of power dissipation at P
, I
(Continued)
O
A
= 1.5A.
(ambient temperature). The maximum allowable power dissipation at any temperature is P
@
25˚C and 50mV
@
−55˚C, +125˚C
@
−55˚C, +125˚C per volt of V
10mA ≤ I
V
10mA ≤ I
t = 20mS
V
V
3V ≤ V
10mA ≤ I
V
V
V
T
V
V
ƒ = 120 Hz, e
C
A
Diff
Diff
Diff
Diff
Diff
Diff
Diff
Diff
Adj
@
= +125˚C, t = 1000 Hrs,
@
−55˚C, +125˚C
= 30V, 10mA ≤ I
= 35V, I
= 35V
= 30V, 10mA ≤ I
= 10V
= 30V
= 3.0V, I
= 2.9V, I
= 10µF, V
V
Diff
O
L
L
L
= 5.0V.
≤ 35V I
Conditions
Conditions
≤ 3A, V
≤ 3A, V
≤ 3A
(Continued)
O
D
L
L
I
= 7.5W.
O
= 10mA
= 1V
= 10mA
= 3A
Diff
= 10V
@
O
4
O
O
change at V
V
= 10mA
RMS
O
= V
= 5.0V
L
L
= 5.0V.
≤ 300mA
≤ 300mA
,
Ref
O
= V
Ref
(Note 10),
(Note 10),
(Note 5),
(Note 5),
(Note 5),
(Note 7),
(Note 5),
(Note 7),
.
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 8)
(Note 4)
Jmax
Notes
Notes
(maximum junction temperature), θ
-12.0
-15.0
-50.0
-9.75
-100
Min
-3.6
-2.0
-5.0
-5.0
-5.0
-5.0
Min
3.0
0.3
66
Max
12.0
15.0
50.0
9.75
Max
100
100
100
3.6
2.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
Dmax
= (T
%/V
Unit
Unit
mV
mV
mV
mV
mV
mV
mV
mA
mA
mV
µA
µA
µA
µA
µA
dB
A
A
Jmax
JA
O
(package junction
- T
A
)/θ
groups
groups
JA
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
4, 5, 6
Sub-
Sub-
2, 3
2, 3
2, 3
or the
1
1
1
1
2