BYQ30EB Philips Semiconductors, BYQ30EB Datasheet - Page 4

• Manufacturer Part Number: BYQ30EB
• Description: Rectifier diodes ultrafast/ rugged
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1997
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
0.01
0.01
20
15
10
0.1
0.1
5
0
10
10
0
1
1
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
1
1
Fig.8. Maximum I
Irrm / A
Irrm / A
Fig.7. Maximum I
I
F
0.5
= f(V
Forward voltage, VF (V)
typ
F
); parameter T
-dIF/dt (A/us)
-dIF/dt (A/us)
10
10
rrm
1
rrm
at T
IF=10A
IF=10A
at T
max
j
j
= 100 ˚C.
= 25 ˚C.
1.5
j
IF=1A
IF=1A
BYQ30
100
100
2
4
Fig.11. Transient thermal impedance; Z
100
0.01
1.0
0.1
10
10
10 us
1
1.0
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
Fig.10. Maximum Q
1 ms
pulse width, tp (s)
IF=10A
-dIF/dt (A/us)
5A
2A
1A
10
P
D
s
BYQ30EB series
at T
0.1 s
Product specification
t
p
j
= 25 ˚C.
th j-mb
t
Rev 1.000
10 s
100
= f(t
p
).