TPC6003 Toshiba Semiconductor, TPC6003 Datasheet - Page 4

• Manufacturer Part Number: TPC6003
• Description: Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

100
12
10
50
30
10
5
4
3
2
1
0
8
6
4
2
0
5
3
1
0
0
1
Common source
V DS = 10 V
Pulse test
8
10
0.1
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
1
3
6
Ta = −55°C
4
100°C
Dain current I D (A)
3.2
100°C
25°C
5
0.2
2
I
I
|Y
3
D
D
fs
– V
– V
10
| – I
2.8
Ta = −55°C
25°C
DS
GS
D
0.3
3
2.7
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
30
V GS = 2.3 V
0.4
4
50
2.6
2.5
100
0.5
5
4
100
0.6
0.5
0.4
0.3
0.2
0.1
10
30
10
8
6
4
2
0
0
3
1
0.1
0
0
4
3
0.3
6, 8, 10
1.5 A
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
1
2
Drain current I D (A)
1
R
V GS = 10 V
V
4.5 V
DS (ON)
2
4
I
DS
D
– V
– V
3
DS
GS
– I
3
6
D
10
Common source
Ta = 25°C
Pulse test
Common source
T a = 25°C
Pulse test
I D = 6 A
Common source
Ta = 25°C
Pulse test
V GS = 2.4 V
3 A
4
8
30
2.8
2007-01-15
TPC6003
2.7
2.6
2.5
www.DataSheet4U.com
100
10
5