TPC8115 Toshiba Semiconductor, TPC8115 Datasheet - Page 5

• Manufacturer Part Number: TPC8115
• Description: Lithium Ion Battery Applications
• Manufacturer: Toshiba Semiconductor

100000
10000
1000
100
1.6
1.2
0.8
0.4
15
10
25
20
−0.1
5
0
−80
2
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = −1.8 V
I D = −2.5 / −5.0 / −10A
−40
I D = −2.5 / −5.0 / −10A
40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Capacitance – V
−1
0
R
DS (ON)
80
I D = −10 A
P
D
40
– Ta
V GS = −2.5 V
(1) Device mounted on a
(2) Device mounted on a
– Ta
120
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
−10
80
DS
DS
C rss
C oss
V GS = −4.5 V
C iss
(V)
−2.5 A
160
120
t = 10 s
−1.8 A
−100
200
160
5
−100
−0.1
−1.6
−1.2
−0.8
−0.4
−10
−30
−25
−20
−15
−10
−5
−1
−2
0
−80
0
0
0
−8
Common source
I D = −10 A
Ta = 25°C
Pulse test
−10
Dynamic input/output characteristics
−40
V DS
0.2
Drain-source voltage V
Ambient temperature Ta (°C)
−4
Total gate charge Q
40
−5
−3
0
V DD = −16 V
−1
0.4
I
V GS
DR
V
th
– V
40
80
– Ta
−4
−8
DS
0.6
V DD = −16V
g
80
DS
V GS = 0 V
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
(nC)
120
(V)
0.8
120
2006-11-15
TPC8115
www.DataSheet4U.com
160
160
1.0
−6
−4
−2
0
−5
−3
−1