TPC8207 Toshiba Semiconductor, TPC8207 Datasheet - Page 4

• Manufacturer Part Number: TPC8207
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

1000.0
100.0
10.0
1.0
10
20
16
12
8
4
0
8
6
4
2
0
0.1
0
0
8
10
25
4
6
0.2
Drain-source voltage V
1
Gate-source voltage V
100
2
Drain current I
1.0
Common source, Ta = 25°C, Pulse test
Ta = −55°C
−55
0.4
2
I
I
|Y
D
D
fs
– V
– V
| – I
25
Ta = 100°C
DS
GS
D
0.6
3
D
10.0
Common source
V DS = 10 V
Pulse test
GS
DS
Common source
V DS = 10 V
Pulse test
(A)
(V)
(V)
V GS = 1.3 V
0.8
4
1.7
1.65
1.55
1.6
1.5
1.4
100.0
1
5
4
1000
100
1.0
0.8
0.6
0.4
0.2
20
16
12
10
8
4
0
0
1
0.1
0
0
10
8
4
6
2
2
Drain-source voltage V
Gate-source voltage V
1
3
Drain current I
1
4
1.9
R
V
DS (ON)
2
4
I
DS
D
– V
V GS = 2 V
– V
6
V GS = 1.3 V
1.8
DS
GS
– I
3
D
D
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
I D = 6 A
10
GS
8
DS
Common source
Ta = 25°C
Pulse test
(A)
1.7
6
(V)
(V)
2.5
4
1.65
10
4
2004-07-06
TPC8207
1.55
1.6
1.5
1.4
100
12
5