TPCA8011-H Toshiba Semiconductor, TPCA8011-H Datasheet - Page 3

• Manufacturer Part Number: TPCA8011-H
• Description: High Efficiency DC/DC Converter Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
SW
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
∼ − 16 V, V
∼ − 16 V, V
(Ta = 25°C)
= 40 A, V
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±10 V, V
= 2.5 V, I
= 4.5 V, I
5 V
0 V
Test Condition
Test Condition
w
D
D
GS
GS
GS
GS
GS
GS
D
D
GS
= 10 µs
= 200 μA
= 20 A
DS
= 20 A
= 20 A
= 5 V, I
= 5 V, I
⎯
= 0 V
= 0 V
= −12 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
I
D
V
= 20A
DD
D
D
= 40 A
= 40 A
∼ − 10 V
V
OUT
Min
Min
0.6
20
60
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
⎯
⎯
⎯
⎯
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⎯
⎯
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8
2900
1300
Typ.
Typ.
120
430
4.7
2.7
7.7
⎯
⎯
⎯
⎯
⎯
13
24
22
61
32
11
16
⎯
⎯
TPCA8011-H
2006-11-16
Max
Max
−1.2
±10
120
www.DataSheet4U.com
1.3
7.5
3.5
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
⎯
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⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V