TPCF8103 Toshiba Semiconductor, TPCF8103 Datasheet - Page 3

• Manufacturer Part Number: TPCF8103
• Description: Notebook PC Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
I
I
C
|Y
C
C
Q
Q
GSS
DSS
V
t
t
Q
on
off
oss
t
rss
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= -2.7 A , V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
= -10 mA, V
= -10 mA, V
= -2.7 A
3
(Ta = 25°C)
-5 V
= -20 V, V
= -10 V, I
= -10 V, I
= -10 V, V
= ±8 V, V
= -1.8V, I
= -2.5 V, I
= -4.5 V, I
∼ − -16 V, V
GS
0 V
Test Condition
= 0 V
Test Condition
⎯
w
D
D
D
DS
= 10 μs
GS
GS
D
D
GS
GS
GS
= -200μA
= -1.4 A
= -0.7 A
= -1.4 A
= -1.4A
= 0 V
= 0 V
= 8 V
V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
I
D
DD
= -1.4 A
∼ − -10 V
V
OUT
-0.5
Min
Min
-30
-12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
215
110
470
4.7
72
70
80
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
9
8
6
4
2
www.DataSheet4U.com
TPCF8103
2006-11-16
-10.8
Max
Max
-1.2
±10
300
160
110
-10
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V