TPCF8103 Toshiba Semiconductor, TPCF8103 Datasheet - Page 5

no-image

TPCF8103

Manufacturer Part Number
TPCF8103
Description
Notebook PC Applications
Manufacturer
Toshiba Semiconductor
Datasheet
10000
1000
300
250
200
150
100
100
2.5
1.5
0.5
50
10
−0.1
−80
0
3
2
1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
Common source
Pulse test
−2.5 V
−4.5 V
V GS = −1.8 V
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
−1
0
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
I D = −0.7, −1.4, −2.7 A
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
40
80
– Ta
I D = −1.4 A
I D = −2.7 A
– Ta
−10
80
DS
120
C oss
C iss
C rss
I D = −1.4 A
120
−0.7 A
−0.7 A
−100
160
160
5
−100
−2.0
−1.5
−1.0
−0.5
−0.0
−10
−20
−16
−12
−1
−8
−4
−80
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 μA
Pulse test
Dynamic input/output characteristics
−2.5
V DS
−40
0.4
−2
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
−1.8
−4.5
0
−1
0.8
−4
I
DR
V
th
V GS = 0 V
– V
40
– Ta
DS
1.2
−6
V GS
−4 V
80
Common source
I D = −2.7 A
Ta = 25°C
Pulse test
www.DataSheet4U.com
V DD = −16 V
TPCF8103
1.6
−8
120
2006-11-16
−8 V
160
−10
2.0
−10
−8
−6
−4
−2
0

Related parts for TPCF8103