TPCP8401 Toshiba Semiconductor, TPCP8401 Datasheet - Page 2

• Manufacturer Part Number: TPCP8401
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
N-ch
Common Absolute Maximum Ratings
Drain-source voltage
Gate-source voltage
Drain current
Channel temperature
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
Storage temperature range
Note:
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Mounted on FR4 board (glass epoxy, 0.8mm thick, Cu area: 25.4mm2) (t = 5s)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: “●” on the lower left of the marking indicates pin 1.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(b) Mounted on FR4 board (glass epoxy, 0.8mm thick, printed minimum pad dimensions: 25.4mm2) (t = 5s)
“*” shows the lot number, which consists of three digits. The first digit denotes the year of manufacture,
expressed as the last digit of the calendar year; the next two digits denote the week of manufacture.
DD
Characteristics
Characteristics
DC
Pulse
Characteristics
= −10 V, T
(Note 2a, 3b, 5)
ch
Week of manufacture
(01 for the first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
(Note 1)
(Note 1)
= 25°C (initial), L = 0.5 mH, R
(Note 2a)
(Note 2b)
Symbol
Symbol
V
V
E
T
I
T
T
GSS
DSS
I
DP
AR
stg
D
ch
ch
R
R
Symbol
th (ch-a)
th (ch-a)
(Ta=25°C )
−55~150
2
G
Rating
Rating
0.12
±10
150
150
63.8
0.1
0.2
Max
20
125
= 25 Ω, I
°C/W
°C/W
Unit
AR
Unit
Unit
mJ
°C
°C
°C
V
V
A
= −2.75 A
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TPCP8401
2006-11-13