TPCP8401 Toshiba Semiconductor, TPCP8401 Datasheet - Page 4

• Manufacturer Part Number: TPCP8401
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Precaution
100 µA for this product. For normal switching operation, V
requires a lower voltage than V
product is 1.5 V or higher.
V
Be sure to take this into consideration when using the device. The V
N-ch
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Switching time
Input capacitance
Reverse transfer capacitance
Output capacitance
th
can be expressed as the voltage between the gate and source when the low operating current value is I
Characteristics
Turn-on time
Turn-off time
th
. (The relationship can be established as follows: V
V
R
Symbol
( BR ) DSS
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
t
t
on
off
oss
iss
rss
th
fs
|
V
V
I
V
V
V
V
V
Duty < = 1%, t
V
D
V
GS
DS
DS
GS
GS
GS
DS
DS
GS
= 0.1 mA, V
4
2.5 V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= ±10 V, V
= 1.5 V, I
= 2.5 V, I
= 4 V, I
0 V
GS (on)
Test Condition
D
D
D
w
GS
D
D
GS
= 0.1 mA
= 10 mA
= 10 mA
= 10 µs
GS
DS
requires a higher voltage than V
= 1 mA
= 10 mA
= 0 V, f = 1 MHz
= 0 V
= 0 V
V
= 0 V
I
D
GS
DD
= 10 mA
∼ − 3 V
recommended voltage for turning on this
V
OUT
GS (off)
Min
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
< V
Typ.
th
125
5.2
2.2
1.5
9.3
4.5
9.8
70
⎯
⎯
⎯
⎯
⎯
< V
www.DataSheet4U.com
TPCP8401
th
GS (on).)
2006-11-13
Max
1.1
±1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
1
4
3
GS (off)
Unit
mS
µA
µA
pF
ns
V
V
Ω
D
=