T35L3232B TM Technology Inc., T35L3232B Datasheet - Page 5

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T35L3232B

Manufacturer Part Number
T35L3232B
Description
32k X 32 Sram Pipeline And Flow-through Burst Mode
Manufacturer
TM Technology Inc.
Datasheet
tm
FLOW-THROUGH READ TIMING
Note: 1. Q(A2) refers to output from address A2. Q (A2 + 1) refers to output from the next internal burst
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
G W , B W E ,
B W 1 - B W 4
AD D R E S S
( N O T E 2 )
2. CE2 and CE2 have timing identical to CE . On this diagram, when CE is LOW, CE2 is LOW
3. Timing is shown assuming that the device was not enabled before entering into this sequence.
4. Output are disabled t KQHZ after diselect.
A D S P
AD S C
A D V
address following A2.
and CE2 is HIGH. When CE is HIGH, CE2 is HIGH and CE2 is LOW.
does not cause Q to be driven until after the following clock rising edge.
C L K
O E
C E
Q
CH
TE
High-Z
t AD S S t A D S H
t C E S t C E H
t AS t A H
A 1
t K H t K L
t K Q LZ
t KQ
t O EQ
t K C
S i n g le R E A D
t W S t W H
Q (A1 )
t O EHZ
t AD S S t A D S H
A2
t O EL Z
t A A S t A AH
t K Q X
t KQ
Q (A2 )
(NOTE 1 )
Q (A2 +1 )
P. 13
AD V s us pe n ds bu rs t .
Q (A2 +2 )
B U R ST R E AD
Preliminary T35L3232B
Q (A2 +3 )
Publication Date: FEB. 2000
Q(A2 )
B ur s t w ra ps a ro und to
i t s i n i t a l s t a t e .
DON'T CARE
UNDEFINED
D e s e le c t C y c le
Q (A2 +1 )
( NO T E 4 )
Revision:0.A
Q (A2 +2 )
t KQ HZ
OE

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