RF5117 RF Micro Devices, RF5117 Datasheet - Page 3

• Manufacturer Part Number: RF5117
• Description: 3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
• Manufacturer: RF Micro Devices

Rev A7 041007
Base
Pkg
Pin
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
BIAS GND1
BIAS GND2
PWR SEN
PWR REF
Function
RF OUT
RF OUT
RF OUT
VREG1
VREG2
RF IN
GND
VCC
VCC
NC
NC
NC
NC
Description
RF input. Matching network with DC block required, see evaluation
board schematic for details.
Ground for first stage bias circuit. Not connected.
The PWR SEN and PWR REF pins can be used in conjunction with an
external feedback path to provide an RF power control function for the
RF5117. The power control function is based on sampling the RF drive
to the final stage of the RF5117.
Same as pin 3.
This pin requires a regulated supply to maintain nominal bias current.
Same as pin 5.
Ground for second stage bias circuit. For best performance connect to
ground with a 10nH inductor.
Not connected.
Not connected.
RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur-
rents.
Same as pin 10.
Same as pin 10.
Interstage match and bias for first stage output. Connect interstage
matching capacitor to this pad with a short trace. Connect low-fre-
quency bypass capacitors to this pin with a long trace. See evaluation
board layout for details.
Same as pin 13.
Not connected.
Not connected.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device will
be required.
Interface Schematic
See pin 5.
See pin 3.
See pin 5.
See pin 5.
See pin 10.
See pin 10.
See pin 1.
See pin 1.
VREG1
VREG2
RF IN
RF5117
BIAS
BIAS
BIAS
RF OUT
GND1
BIAS
VCC
BIAS
Inductance
Bond Wire
PWR SEN
PWR REF
RF OUT
GND2
BIAS
2-575