BTA08-600BW3 ON Semiconductor, BTA08-600BW3 Datasheet - Page 2

• Manufacturer Part Number: BTA08-600BW3
• Description: Triacs Silicon Bidirectional Thyristors
• Manufacturer: ON Semiconductor

2. Indicates Pulse Test: Pulse Width
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On-State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non−Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On−State Current
Critical Rate of Rise of Off-State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 125 C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = 100 mA)
= 0.66 x V
= 11 A Peak)
DRM
J
DRM
= 125 C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 12 V, I
RRM
D
Junction−to−Case (AC)
Junction−to−Ambient
= 12 V, R
G
; Gate Open)
J
= 2 x I
G
= 125 C)
= 60 mA)
Characteristic
Characteristic
L
GT
= 30 W)
2.0 ms, Duty Cycle
, tr
D
(T
= 12 V, R
J
100 ns)
= 25 C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
2%.
J
= 125 C)
2
T
T
J
J
= 25 C
= 125 C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
,
c
2000
Min
2.5
2.5
2.5
0.5
0.5
0.5
0.2
0.2
0.2
1.5
−
−
−
−
−
−
−
−
Value
Typ
260
2.5
63
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.005
Max
1.55
2.0
1.7
1.1
1.1
50
50
50
60
70
90
70
50
−
−
−
−
−
A/ms
A/ms
V/ms
Unit
Unit
C/W
mA
mA
mA
mA
V
V
V
C